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See Technical Specifications

BSC0906NS +BOM

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Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC0906NS
Datasheet:

BSC0906NS Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for BSC0906NS

BSC0906NS General Description

Product BSC0906NS is a cutting-edge N-channel MOSFET specifically engineered for demanding high-speed switching applications in power management circuits. With a maximum drain-source voltage of 60V and a continuous drain current of 3.5A, this MOSFET delivers exceptional performance in a compact SOT-223 package. Its low on-resistance of 150mΩ at a Vgs of 10V ensures efficient power delivery and minimal heat dissipation

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 63A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 15 V	Power Dissipation (Max)	2.5W (Ta), 30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC0906