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BSC093N04LSG +BOM

BSC093N04LS G MOSFET N40V 13A OptiMOS 3 TDSON8 RL

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC093N04LSG
Datasheet:

BSC093N04LSG Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Models:

Request Free CAD Models for BSC093N04LSG

BSC093N04LSG General Description

Moreover, this MOSFET is designed for high-speed switching applications, boasting a low gate charge of 77nC and a fast switching speed. These characteristics enable the BSC093N04LSG to efficiently control power flow and reduce switching losses in high-frequency systems, ensuring smooth operation and enhanced performance. With its combination of compact design, high current rating, and fast switching capabilities, the BSC093N04LSG stands out as a reliable and efficient choice for power management needs

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 49A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.3mOhm @ 40A, 10V	Vgs(th) (Max) @ Id	2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 20 V	Power Dissipation (Max)	2.5W (Ta), 35W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC093