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ROHS-compliant N-Channel MOSFET for efficient power management
8-PowerTDFNManufacturer:
Infineon Technologies
Mfr.Part #:
BSC096N10LS5ATMA1
Datasheet:
Series:
OptiMOS™ 5
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
100 V
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Infineon's OptiMOS™ 5 series has once again delivered an outstanding product with the BSC096N10LS5ATMA1 power MOSFET. Its impressive 100V drain-source voltage, 96A continuous drain current, and low on-state resistance of only 5mΩ make it a standout choice for high power applications where minimizing power losses is crucial for overall system efficiency
Series | OptiMOS™ 5 | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V | Vgs(th) (Max) @ Id | 2.3V @ 36µA |
Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V | Power Dissipation (Max) | 3W (Ta), 83W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC096 |
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