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See Technical Specifications

BSC119N03S +BOM

The BSC119N03S MOSFET is engineered for N-channel operation, supporting voltages of up to 30V and currents of 11

Manufacturer:

Infineon Technologies Ag
Mfr.Part #:

BSC119N03S
Datasheet:

BSC119N03S Datasheet (PDF)
ECCN (US):

EAR99
HTS:

8541.29.00.95
Automotive:

No
PPAP:

No
EDA/CAD Models:

Request Free CAD Models for BSC119N03S

BSC119N03S General Description

The BSC119N03S power MOSFET transistor, crafted by Infineon Technologies, is a reliable and high-performance component designed for a multitude of applications. With a Vds rating of 30V and an Id of 109A, this N-channel MOSFET is capable of handling substantial power demands with ease and efficiency. Its low Rds(on) of 1.7mΩ ensures minimal power loss, making it an ideal choice for motor control, power supplies, and battery management systems. Housed in a TO-220 package, the BSC119N03S offers excellent thermal performance and easy mounting on a heatsink, further enhancing its versatility and practicality in various setups

Key Features

Ruggedness for harsh environments
High voltage and current ratings

Application

Reliable control
Energy-efficient designs
Compact solutions

Specifications

ECCN (US)	EAR99	Part Status	Unconfirmed
HTS	8541.29.00.95	Automotive	No
PPAP	No	Category	Power MOSFET
Process Technology	OptiMOS	Configuration	Single Quad Drain Triple Source
Channel Mode	Enhancement	Channel Type	N
Number of Elements per Chip	1	Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20	Maximum Continuous Drain Current (A)	11.9
Maximum Drain Source Resistance (mOhm)	11.9@10V	Typical Gate Charge @ Vgs (nC)	8@5V
Typical Input Capacitance @ Vds (pF)	1030@15V	Maximum Power Dissipation (mW)	2800
Typical Fall Time (ns)	2.6	Typical Rise Time (ns)	3.4
Typical Turn-Off Delay Time (ns)	15	Typical Turn-On Delay Time (ns)	3.8
Minimum Operating Temperature (°C)	-55	Maximum Operating Temperature (°C)	150
Mounting	Surface Mount	PCB changed	8
Pin Count	8	Lead Shape	No Lead