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BSC120N03LSG +BOM

N-channel Power MOSFET

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC120N03LSG
Datasheet:

BSC120N03LSG Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for BSC120N03LSG

BSC120N03LSG General Description

The BSC120N03LS G power MOSFET is a versatile and reliable component that offers exceptional performance in power electronics applications. With its low on-state resistance, high power handling capability, and advanced MOSFET technology, it is a go-to choice for designers looking to optimize efficiency and reliability in power management circuits. Its ability to operate at high switching frequencies and its robust TO-263 package make it well-suited for demanding environments across various industries

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 15 V	Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC120