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BSC150N03LD +BOM

Product BSC150N03LD is a set of two N-Channel MOSFETs in TDSON-8 packages

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC150N03LD
Datasheet:

BSC150N03LD Datasheet (PDF)
Series:

OptiMOS™3
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
EDA/CAD Models:

Request Free CAD Models for BSC150N03LD

BSC150N03LD General Description

The BSC150N03LD power MOSFET is a versatile component engineered for high-current applications. With a drain-source voltage of 30V and a continuous drain current of 150A, this MOSFET is well-suited for demanding tasks such as electric vehicles, robotics, and power supplies. Its low on-resistance of 5.5mΩ is a standout feature that minimizes power loss and enhances efficiency, making it an excellent choice for energy-conscious applications. The TO-263 package offers convenient mounting and efficient heat dissipation, while the low gate charge of 40nC enables swift switching speeds and reduced switching losses. The MOSFET's junction-to-case thermal resistance of 1.3°C/W ensures that it remains cool during operation, further bolstering its reliability and durability in challenging operating conditions

Specifications

Series	OptiMOS™3	Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	Current - Continuous Drain (Id) @ 25°C	8A
Rds On (Max) @ Id, Vgs	15mOhm @ 20A, 10V	Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.4nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Power - Max	26W	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	BSC150