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BSC190N12NS3G +BOM

This N-channel MOSFET, product code BSC190N12NS3 G, offers a low drain-source resistance of 19 milliohms at a gate-source voltage of 10 volts

BSC190N12NS3G General Description

N-Channel 120 V 8.6A (Ta), 44A (Tc) 69W (Tc) Surface Mount PG-TDSON-8-1

Specifications

Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 39A, 10V Vgs(th) (Max) @ Id 4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 60 V Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number BSC190

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