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See Technical Specifications

BSC600N25NS3 G +BOM

OptiMOS 3 N-Channel MOSFET

Manufacturer:

Infineon
Mfr.Part #:

BSC600N25NS3 G
Datasheet:

BSC600N25NS3 G Datasheet (PDF)
IDpuls Max:

100.0 A
Ptot Max:

125.0 W
VDS Max:

250.0 V
Polarity:

N
EDA/CAD Models:

Request Free CAD Models for BSC600N25NS3 G

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BSC600N25NS3 G General Description

Infineon Technologies’ EasyDUAL CoolSiC series offers a convenient half-bridge configuration with two 600V SiC MOSFETs and separate gate drivers, providing a comprehensive solution for power electronics design. The BSC600N25NS3 G power module stands out with its typical on-state resistance of 15mΩ and a maximum operating temperature of 175°C, ensuring high performance under demanding conditions. This power module is an excellent choice for designers looking to optimize power electronic systems for efficiency and reliability

Key Features

Microwave and RF applications supported
Durable and long-lasting operation
High frequency and voltage tolerance
Automotive and industrial grade quality

Application

Electric vehicle technology
Sustainable energy solutions
Advanced power systems

Specifications

IDpuls max	100.0 A	Ptot max	125.0 W
VDS max	250.0 V	Polarity	N
RDS (on) max	60.0 mΩ	ID max	25.0 A
VGS(th) max	4.0 V	VGS(th) min	2.0 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C