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BSC600N25NS3GATMA1 +BOM

Single N-Channel 250V power MOSFET with 60mOhm

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC600N25NS3GATMA1
Datasheet:

BSC600N25NS3GATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

250 V
EDA/CAD Models:

Request Free CAD Models for BSC600N25NS3GATMA1

BSC600N25NS3GATMA1 General Description

Featuring a drain-source voltage rating of 250V and a continuous drain current of 25A, the BSC600N25NS3GATMA1 MOSFET is designed for high-power applications. With a low on-resistance of 0.05ohm and a threshold voltage of 3V, it offers efficient power handling and precise control. The TDSON-8 package with 8 pins allows for easy installation and heat dissipation, while the maximum operating temperature of 150°C ensures reliable performance in demanding environments. This MOSFET is ideal for automotive and industrial applications where high reliability and performance are essential

Key Features

Highly Efficient Power Solution
Micropower Electronics Technology
Silicon Valley Innovation Leader
Digital Signal Processing Expertise
Advanced Logic Control Solutions
Embedded System Integration Platform

Application

Wind turbines
Solar inverters
Power supplies
High power converters

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V	Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 100 V	Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC600