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BUK766R0-60E,118 +BOM
N-Channel 60 V 75A (Tc) 182W (Tc) Surface Mount D2PAK
D2PAK-
Manufacturer:
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Mfr.Part #:
BUK766R0-60E,118
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Datasheet:
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Id:
http://www.data.nexperia.com/id/plm/salesItem/934066645118
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Nc12:
934066645118
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PackingDescription:
Reel 13" Q1/T1
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PackingQuantity:
800
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EDA/CAD Models:
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Availability: 5398 PCS
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BUK766R0-60E,118 General Description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Key Features
- AEC-Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
Application
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Specifications
id | http://www.data.nexperia.com/id/plm/salesItem/934066645118 | nc12 | 934066645118 |
name | BUK766R0-60E,118 | packingDescription | Reel 13" Q1/T1 |
packingQuantity | 800 | Product Category: | MOSFET |
Technology: | Si | Mounting Style: | SMD/SMT |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 75 A |
Rds On - Drain-Source Resistance: | 4.58 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.4 V | Qg - Gate Charge: | 62 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 182 W | Channel Mode: | Enhancement |
Qualification: | AEC-Q101 | Packaging: | MouseReel |
Product Type: | MOSFET | Factory Pack Quantity: | 800 |
Subcategory: | MOSFETs | Part # Aliases: | 934066645118 |
Unit Weight: | 0.139332 oz |
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In Stock: 5,398
Minimum Order: 1
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