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See Technical Specifications

BUL45D2G +BOM

NPN Bipolar Junction Transistor with 400V Voltage Rating and 5A Current Capacity, Packaged in TO-220AB Tube

Manufacturer:

Onsemi
Mfr.Part #:

BUL45D2G
Datasheet:

BUL45D2G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

221A
MSL Type:

NA
MSL Temp (°C):

0
EDA/CAD Models:

Request Free CAD Models for BUL45D2G

Email: [email protected]

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Tel: +852 95804164

BUL45D2G General Description

Introducing the BUL45D2G, a High Speed High gain BIPolar transistor that pushes the boundaries of technology. Its high dynamic characteristics and incredibly low spread (just 150 ns on storage time) set it apart as a standout option for light ballast applications. The need for guaranteeing an hFE window becomes obsolete with this advanced transistor, as it consistently delivers exceptional performance without fail. Trust in the BUL45D2G to power your projects with efficiency and precision

Key Features

Precise Temperature Control for Optimal Performance
Minimized Heat Generation for Longer Lifespan
Enhanced Safety Features for Reduced Risk
Rugged Design for Harsh Environmental Conditions

Specifications

Status	Active	Compliance	PbAHP
Case Outline	221A	MSL Type	NA
MSL Temp (°C)	0	Container Type	TUBE
Container Qty.	50	ON Target	Y
Polarity	NPN	Type	General Purpose
VCE(sat) Max (V)	0.8	IC Cont. (A)	5
VCEO Min (V)	400	VCBO (V)	700
VEBO (V)	12	VBE(sat) (V)	0.8
hFE Min	22	PTM Max (W)	75
Pricing ($/Unit)	$0.8861