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BUV22 +BOM
Product Overview: Bipolar Transistors - BJT with 40A, 250V, 250W ratings
TO-204-2-
Manufacturer:
Onsemi
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Mfr.Part #:
BUV22
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Datasheet:
-
Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
250 V
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EDA/CAD Models:
Availability: 7072 PCS
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BUV22 General Description
Bipolar (BJT) Transistor NPN 250 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)
Key Features
- Safe and Reliable Performance
- High Current Handling up to 30 A
- Fast Recovery Time: 0.5 ms at IC = 20 A
- RoHS Compliant
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 250 V | Collector- Base Voltage VCBO | 300 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.5 V |
Maximum DC Collector Current | 40 A | Pd - Power Dissipation | 250 mW |
Gain Bandwidth Product fT | 8 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 40 A |
DC Collector/Base Gain hfe Min | 20 | Height | 8.51 mm |
Length | 38.86 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 100 | Subcategory | Transistors |
Technology | Si | Width | 26.67 mm |
Unit Weight | 0.056438 oz |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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