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BUV22 +BOM

Product Overview: Bipolar Transistors - BJT with 40A, 250V, 250W ratings

BUV22 General Description

Bipolar (BJT) Transistor NPN 250 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)

Key Features

  • Safe and Reliable Performance
  • High Current Handling up to 30 A
  • Fast Recovery Time: 0.5 ms at IC = 20 A
  • RoHS Compliant

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 250 V Collector- Base Voltage VCBO 300 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 1.5 V
Maximum DC Collector Current 40 A Pd - Power Dissipation 250 mW
Gain Bandwidth Product fT 8 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Continuous Collector Current 40 A
DC Collector/Base Gain hfe Min 20 Height 8.51 mm
Length 38.86 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 100 Subcategory Transistors
Technology Si Width 26.67 mm
Unit Weight 0.056438 oz

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In Stock: 7,072

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