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CA3127E PDIP-16

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See Technical Specifications

CA3127E +BOM

Individual Bipolar Junction Transistor Array in DIP Package

Manufacturer:

INTERSIL
Mfr.Part #:

CA3127E
Datasheet:

CA3127E Datasheet (PDF)
Transistor Polarity:

NPN
Configuration:

Quint
Collector- Emitter Voltage VCEO Max:

15 V
Collector- Base Voltage VCBO:

20 V
EDA/CAD Models:

Request Free CAD Models for CA3127E

Key Features

Gain Bandwidth Product (fT). . . . . . . . . . . . . . . .>1GHz
Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
Five Independent Transistors on a Common Substrate

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN
Configuration	Quint	Collector- Emitter Voltage VCEO Max	15 V
Collector- Base Voltage VCBO	20 V	Emitter- Base Voltage VEBO	4 V
Maximum DC Collector Current	20 mA	Pd - Power Dissipation	85 mW
Gain Bandwidth Product fT	1 GHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	DC Collector/Base Gain hfe Min	35 at 5 mA, 6 V
Height	4.95 mm	Length	19.68 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	7.11 mm
Unit Weight	0.057419 oz

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CA3127E

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Availability: 5,136 PCS

PDIP-16

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