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See Technical Specifications

IRFF330 +BOM

Exploring the Features of IRFF330 N-Channel Power MOSFETs

Manufacturer:

INTERSIL
Mfr.Part #:

IRFF330
Datasheet:

IRFF330 Datasheet (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for IRFF330

IRFF330 General Description

N CHANNEL MOSFET, 400V, 3A TO-205AF; Tra; N CHANNEL MOSFET, 400V, 3A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

Key Features

3.5A, 400V
rDS(ON) = 1.000Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

Part Life Cycle Code	Transferred	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.29.00.95
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	400 V	Drain Current-Max (ID)	3.5 A
Drain-source On Resistance-Max	1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-205AF	JESD-30 Code	O-MBCY-W3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	25 W	Power Dissipation-Max (Abs)	25 W
Pulsed Drain Current-Max (IDM)	14 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	WIRE	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	90 ns	Turn-on Time-Max (ton)	65 ns