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CAB008M12GM3T +BOM

Mosfet Array 1200V (1.2kV) 146A (Tj) Chassis Mount Module

CAB008M12GM3T General Description

Discrete Semiconductor Modules SiC, Module, 8mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM

Specifications

Product Category Discrete Semiconductor Modules Product Power MOSFET Modules
Type Half-Bridge Module Technology SiC
Vgs - Gate-Source Voltage - 4 V, + 15 V Mounting Style Screw Mount
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Series WolfPACK Configuration Dual
Id - Continuous Drain Current 146 A Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 8 mOhms Factory Pack Quantity 18
Subcategory Discrete Semiconductor Modules Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs th - Gate-Source Threshold Voltage 3.6 V

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