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CGHV60075D5-GP4 +BOM

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt

Manufacturer:

Wolfspeed
Mfr.Part #:

CGHV60075D5-GP4
Datasheet:

CGHV60075D5-GP4 Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

6 GHz

RF Mosfet 50 V 125 mA 6GHz 17dB 75W Die

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN
Operating Frequency	6 GHz	Gain	17 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	150 V
Vgs - Gate-Source Breakdown Voltage	150 V	Id - Continuous Drain Current	10 A
Output Power	75 W	Maximum Drain Gate Voltage	-
Pd - Power Dissipation	41.6 W	Mounting Style	SMD/SMT
Application	-	Class	-
Configuration	-	Development Kit	-
Fall Time	-	Forward Transconductance - Min	-
Gate-Source Cutoff Voltage	-	Height	100 um
Length	3 mm	NF - Noise Figure	-
Operating Temperature Range	-	P1dB - Compression Point	-
Product	GaN HEMTs	Product Type	RF JFET Transistors
Rds On - Drain-Source Resistance	280 mOhms	Rise Time	-
Factory Pack Quantity	10	Subcategory	Transistors
Typical Turn-Off Delay Time	-	Vgs th - Gate-Source Threshold Voltage	- 10 V, 2 V
Width	820 um