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See Technical Specifications

CGH40025F +BOM

3-Pin Case 440166

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RF Mosfet 28 V 250 mA 0Hz ~ 6GHz 13dB 30W 440166

Product Category	RF JFET Transistors	Transistor Type	HEMT
Technology	GaN	Operating Frequency	2 GHz to 6 GHz
Gain	15 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V	Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	3 A	Output Power	30 W
Maximum Drain Gate Voltage	-	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	-
Mounting Style	Screw Mount	Application	-
Class	-	Configuration	Single
Development Kit	CGH40025F-TB	Fall Time	-
Forward Transconductance - Min	-	Gate-Source Cutoff Voltage	-
Height	3.43 mm	Length	14.09 mm
NF - Noise Figure	-	Operating Temperature Range	-
P1dB - Compression Point	-	Product	GaN HEMT
Product Type	RF JFET Transistors	Rds On - Drain-Source Resistance	-
Rise Time	-	Factory Pack Quantity	1
Subcategory	Transistors	Typical Turn-Off Delay Time	-
Vgs th - Gate-Source Threshold Voltage	- 3 V	Width	4.19 mm
Unit Weight	0.652216 oz