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RF JFET Transistor for GaN HEMT with 60 Watt power rating
20-TSSOPManufacturer:
Wolfspeed
Mfr.Part #:
CGHV35060MP
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
3.5 GHz
EDA/CAD Models:
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Wolfspeed, a Cree Company, has set a new standard in RF and microwave applications with its CGHV35060MP GaN HEMT. This high-power transistor offers a drain-source voltage of 28V, a maximum drain current of 8A, and a power output of up to 80W, making it perfectly suited for radar systems, satellite communications, and ISM equipment. With its emphasis on high efficiency and reduced heat dissipation, this transistor delivers exceptional performance in demanding applications. Its built-in ESD protection ensures long-term reliability, while its compact package size and excellent thermal conductivity make it an ideal choice for small footprint designs and high-power density requirements. The CGHV35060MP is a true powerhouse in the world of high-power transistors, offering unmatched performance and reliability for critical applications
Product Category | RF JFET Transistors | Shipping Restrictions | This product may require additional documentation to export from the United States. |
Transistor Type | HEMT | Technology | GaN |
Operating Frequency | 3.5 GHz | Gain | 14.5 dB |
Transistor Polarity | N-Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V | Id - Continuous Drain Current | 10.4 A |
Output Power | 75 W | Maximum Drain Gate Voltage | 50 V |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 107 C |
Pd - Power Dissipation | 52 W | Mounting Style | SMD/SMT |
Application | S Band Radar and LTE base stations | Configuration | Single |
Operating Temperature Range | - 40 C to + 107 C | Product Type | RF JFET Transistors |
Factory Pack Quantity | 250 | Subcategory | Transistors |
Vgs th - Gate-Source Threshold Voltage | - 3 V |
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