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CGH60015D-GP4 +BOM

RF Mosfet 28 V 200 mA 6GHz 15dB 15W Die

Manufacturer:

Wolfspeed
Mfr.Part #:

CGH60015D-GP4
Datasheet:

CGH60015D-GP4 Datasheet (PDF)
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

4 GHz to 6 GHz
Gain:

15 dB

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CGH60015D-GP4 General Description

In conclusion, the CGH60015D-GP4 RF JFET Transistors GaN HEMT Die is a top-of-the-line component that combines cutting-edge technology with unmatched performance. Its versatility, reliability, and power handling capabilities make it a standout choice for any RF system requiring high-performance transistors. Experience the difference with this exceptional product

Specifications

Product Category	RF JFET Transistors	Transistor Type	HEMT
Technology	GaN	Operating Frequency	4 GHz to 6 GHz
Gain	15 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V	Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	1.5 A	Output Power	15 W
Maximum Drain Gate Voltage	-	Pd - Power Dissipation	-
Mounting Style	SMD/SMT	Application	-
Class	-	Configuration	Single
Development Kit	-	Fall Time	-
Gate-Source Cutoff Voltage	-	Height	100 um
Length	1.06 mm	NF - Noise Figure	-
Operating Temperature Range	-	P1dB - Compression Point	-
Product	GaN HEMT	Product Type	RF JFET Transistors
Rds On - Drain-Source Resistance	1 Ohms	Rise Time	-
Factory Pack Quantity	10	Subcategory	Transistors
Typical Turn-Off Delay Time	-	Vgs th - Gate-Source Threshold Voltage	- 3 V
Width	920 um	Unit Weight	0.130443 oz