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CGHV40200PP +BOM

Efficient Radio Frequency Amplification Device

Manufacturer:

Wolfspeed
Mfr.Part #:

CGHV40200PP
Datasheet:

CGHV40200PP Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

1.7 GHz to 1.9 GHz

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CGHV40200PP General Description

In conclusion, the CGHV40200PP sets a high standard for power amplification in the aerospace and defense industry. With its impressive specifications and industry-leading design, this product is a top choice for demanding applications that require high power and frequency capabilities. Experience the difference with the CGHV40200PP – the ultimate solution for your aerospace and defense needs

Specifications

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN
Operating Frequency	1.7 GHz to 1.9 GHz	Gain	16.1 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	150 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V	Id - Continuous Drain Current	8.7 A
Output Power	250 W	Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	166 W	Mounting Style	Screw Mount
Configuration	Single	Development Kit	CGHV40200PP-AMP1
Forward Transconductance - Min	-	Product Type	RF JFET Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Vgs th - Gate-Source Threshold Voltage	- 3 V