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See Technical Specifications

CPH5517-TL-E +BOM

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Manufacturer:

onsemi
Mfr.Part #:

CPH5517-TL-E
Datasheet:

CPH5517-TL-E Datasheet (PDF)
Transistor Type:

NPN, PNP (Common Base)
Current - Collector (Ic) (Max):

1A
Voltage - Collector Emitter Breakdown (Max):

50V
Vce Saturation (Max) @ Ib, Ic:

430mV @ 10mA, 500mA
EDA/CAD Models:

Request Free CAD Models for CPH5517-TL-E

CPH5517-TL-E General Description

Featuring a dual configuration with NPN and PNP transistors, the CPH5517-TL-E module offers versatility and flexibility for electronic circuit design. With a Collector Emitter Voltage of 50V and a Typ Gain Bandwidth of 420MHz, this transistor provides reliable performance for signal amplification and switching applications. The Power Dissipation of 900mW and DC Collector Current of 1A ensure efficient operation, while the DC Current Gain of 560 optimizes signal amplification. The Transistor Case Style of SOT-346 allows for easy installation and connection with 5 pins for secure attachment

Key Features

Polymer-based material offering high-temperature resistance
Compact and lightweight design for easy installation
Dual-in-line package allowing for increased functionality
High-speed switching operation with low current consumption
Robust construction ensuring reliable performance over time
Molded plastic casing providing added protection and durability

Application

Antennas, Receivers, Transmitters
Filters, Oscillators, Phase Locked Loops
Memory Devices, Data Converters

Specifications

Transistor Type	NPN, PNP (Common Base)	Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	430mV @ 10mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V
Power - Max	900mW	Frequency - Transition	420MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	CPH5517