This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

CSD87502Q2 +BOM

30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection

Manufacturer:

TI
Mfr.Part #:

CSD87502Q2
Datasheet:

CSD87502Q2 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for CSD87502Q2

CSD87502Q2 General Description

With its dual independent MOSFETs, the CSD87502Q2 offers unparalleled flexibility for a wide range of applications. Its compact 2 x 2 mm plastic package houses two FETs that are tailor-made for use in a half-bridge configuration, making it perfect for synchronous buck and various power supply applications. Additionally, these power MOSFETs are also well-suited for adaptor, USB input protection, and battery charging applications. Notably, the CSD87502Q2 stands out with its low drain-to-source on-resistance, which not only minimizes losses but also reduces the component count for space-constrained designs. This makes it a top choice for engineers and designers who prioritize efficiency and compactness in their projects

Key Features

Low On-Resistance
Dual Independent MOSFETs
Space Saving SON 2 × 2 mm Plastic Package
Optimized for 5 V Gate Driver
Avalanche Rated
Pb and Halogen Free
RoHS Compliant

Application

SWITCHING

Specifications

Source Content uid	CSD87502Q2	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	3.1 mJ
Case Connection	DRAIN	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	5 A
Drain-source On Resistance-Max	0.06 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	29 pF	JESD-30 Code	S-PDSO-N6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	23 A
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	35 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.6 V	Qg - Gate Charge	2.2 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.3 W	Channel Mode	Enhancement
Tradename	NexFET	Series	CSD87502Q2
Fall Time	3 ns	Forward Transconductance - Min	75 S
Height	0.75 mm	Length	2 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Typical Turn-Off Delay Time	12 ns
Typical Turn-On Delay Time	3 ns	Width	2 mm
Unit Weight	0.000342 oz