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DMG1013UW-7 +BOM

P-Channel Enhanced MOSFET with -20V VDSS

Manufacturer:

DIODES
Mfr.Part #:

DMG1013UW-7
Datasheet:

DMG1013UW-7 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for DMG1013UW-7

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Tel: +852 95804164

DMG1013UW-7 General Description

Take control of your power management needs with the DMG1013UW-7 P-channel MOSFET. This surface mount MOSFET offers a low on-resistance of 750mΩ at 430mA, ensuring minimal voltage drops and power dissipation in your circuit. Its compact SOT-323 package makes it suitable for small footprint designs, while its 20V voltage rating and 820mA maximum current rating provide ample headroom for various applications. Trust the DMG1013UW-7 to deliver consistent performance across a wide temperature range, making it an excellent choice for demanding electronic projects

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	820 mA	Rds On - Drain-Source Resistance	750 mOhms
Vgs - Gate-Source Voltage	- 6 V, + 6 V	Vgs th - Gate-Source Threshold Voltage	500 mV
Qg - Gate Charge	622.4 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	310 mW
Channel Mode	Enhancement	Series	DMG1013
Configuration	Single	Fall Time	20.7 ns
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	8.1 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	28.4 ns	Typical Turn-On Delay Time	5.1 ns
Unit Weight	0.000212 oz