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DMG1016UDW-7 +BOM

Metal-oxide Semiconductor

DMG1016UDW-7 General Description

Introducing the DMG1016UDW-7, a small signal field-effect transistor designed for high performance in a compact size. With a maximum drain current of 1.066A and a maximum voltage rating of 20V, this transistor is ideal for applications requiring precise control of small signals. It features both N-channel and P-channel elements, and is constructed with silicon using metal-oxide semiconductor technology. The transistor is housed in a green, ultra-small plastic package with 6 pins, making it environmentally friendly and suitable for space-constrained designs

Key Features

  • Industrial-grade reliability
  • Simplified network setup
  • Fault-tolerant switching
    • Dual-power redundancy
    • Prioritized packet forwarding
    • User-based access control

Application

  • Sleek consumer goods
  • Quality electronics
  • Compact security

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.066 A, 845 mA Rds On - Drain-Source Resistance 450 mOhms, 750 mOhms
Vgs - Gate-Source Voltage - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 736.6 nC, 622.4 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 330 mW
Channel Mode Enhancement Series DMG1016
Configuration Dual Fall Time 12.3 ns, 20.72 ns
Product MOSFET Small Signals Product Type MOSFET
Rise Time 7.4 ns, 8.1 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 26.7 ns, 28.4 ns Typical Turn-On Delay Time 5.1 ns, 5.1 ns
Unit Weight 0.000265 oz

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In Stock: 7,310

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.064 $0.32
50+ $0.056 $2.80
150+ $0.052 $7.80
500+ $0.049 $24.50
3000+ $0.046 $138.00
6000+ $0.045 $270.00

The prices below are for reference only.