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FF800R17KE3B2NOSA1 +BOM

IGBT-modules ,Inverter

FF800R17KE3B2NOSA1 General Description

IGBT Module 2 Independent 1700 V 1200 A 5200 W Chassis Mount A-IHV130-3

Infineon Technologies Corporation Inventory
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series IHM-B
IGBT Type - Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1700 V Current - Collector (Ic) (Max) 1200 A
Power - Max 5200 W Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 800A
Current - Collector Cutoff (Max) 5 mA Input Capacitance (Cies) @ Vce 72 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Chassis Mount
feature-technology feature-channel-type
feature-configuration feature-maximum-gate-emitter-voltage-v
feature-maximum-collector-emitter-voltage-v feature-maximum-continuous-collector-current-a
feature-maximum-power-dissipation-mw feature-packaging Tray
feature-pin-count 7 feature-cecc-qualified No
feature-esd-protection feature-military No
feature-aec-qualified Yes feature-aec-qualified-number
feature-auto-motive feature-p-pap
feature-eccn-code EAR99 feature-svhc
feature-svhc-exceeds-threshold No

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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