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FFSH3065B-F085 +BOM

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, TO-247-2L

Manufacturer:

onsemi
Mfr.Part #:

FFSH3065B-F085
Datasheet:

FFSH3065B-F085 Datasheet (PDF)
Product:

Schottky Silicon Carbide Diodes
Mounting Style:

Through Hole
Configuration:

Single
Technology:

SiC
EDA/CAD Models:

Request Free CAD Models for FFSH3065B-F085

FFSH3065B-F085 General Description

The FFSH3065B-F085 Sic Schottky Diode from Onsemi is a powerhouse with a maximum repetitive reverse voltage of 650V and a continuous forward current of 30A. Its TO-247 case style offers excellent thermal performance, making it suitable for high-power applications. With a total capacitive charge of 73Nc, this diode ensures fast and efficient switching, reducing power losses in your circuits. Its simple single configuration and two-pin design make installation a breeze, while its RoHS compliance guarantees environmental friendliness and sustainability

Key Features

Max Junction Temperature 175C
Avalanche Rated 144 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
AEC-Q101 Qualified

Application

Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters

Specifications

Product Category	Schottky Diodes & Rectifiers	Product	Schottky Silicon Carbide Diodes
Mounting Style	Through Hole	Configuration	Single
Technology	SiC	If - Forward Current	30 A
Vrrm - Repetitive Reverse Voltage	650 V	Vf - Forward Voltage	1.38 V
Ifsm - Forward Surge Current	110 A	Ir - Reverse Current	40 uA
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Qualification	AEC-Q101	Pd - Power Dissipation	268 W
Product Type	Schottky Diodes & Rectifiers	Factory Pack Quantity	30
Subcategory	Diodes & Rectifiers	Vr - Reverse Voltage	650 V
Unit Weight	0.187694 oz