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FFSM1065B +BOM

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88

FFSM1065B General Description

With its cutting-edge technology and superior performance characteristics, Silicon Carbide (SiC) Schottky Diodes emerge as a game-changer in the realm of power semiconductors. The innovative design of SiC diodes ensures enhanced switching performance, superior reliability, and temperature-independent operation when compared to conventional Silicon diodes. These unique features translate into a range of system benefits, including increased efficiency, faster operating frequencies, higher power density, reduced EMI, and cost savings due to smaller system sizes. As a next-generation power semiconductor, Silicon Carbide diodes offer a promising solution for applications that demand improved performance and efficiency. By leveraging the advantages of SiC technology, engineers and designers can propel their systems towards higher levels of performance and reliability

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Key Features

  • No Toxic Substances or Materials
  • Fast Response Time for Real-Time Applications
  • Surface Mount Technology for Easy Installation
  • High-temperature Soldering Capability
  • Precise Current Control for Accurate Power Management
  • Compact and Lightweight for Portable Devices
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Application

  • Real estate
  • Food industry
  • Aviation
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Specifications

Status Active Case Outline 483AP
MSL Temp (°C) 260 Container Type REEL

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FFSM1065B Datasheet PDF

Preliminary Specification FFSM1065B PDF Download

FFSM1065B PDF Preview

In Stock: 3,843

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.251 $2.25
10+ $1.958 $19.58
30+ $1.775 $53.25
100+ $1.586 $158.60
500+ $1.502 $751.00
1000+ $1.466 $1,466.00

The prices below are for reference only.

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