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See Technical Specifications

FFSH50120A +BOM

Diode 1200 V 77A Through Hole TO-247-2

Manufacturer:

onsemi
Mfr.Part #:

FFSH50120A
Datasheet:

FFSH50120A Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FFSH50120A

FFSH50120A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key Features

Fast Turn-On Time
Low Forward Current
No Storage Current
High Surge Immunity

Application

Low Maintenance
Cost-effective Solution
Environmentally Friendly

Specifications

Source Content uid	FFSH50120A	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	48 Weeks
Additional Feature	HIGH RELIABILITY, PD-CASE	Application	EFFICIENCY
Case Connection	CATHODE	Configuration	SINGLE
Diode Element Material	SILICON CARBIDE	Diode Type	RECTIFIER DIODE
Forward Voltage-Max (VF)	1.75 V	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T2	JESD-609 Code	e3
Non-rep Pk Forward Current-Max	280 A	Number of Elements	1
Number of Phases	1	Number of Terminals	2
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Output Current-Max	77 A	Power Dissipation-Max	736 W
Rep Pk Reverse Voltage-Max	1200 V	Reverse Current-Max	200 µA
Reverse Test Voltage	1200 V	Surface Mount	NO
Technology	SCHOTTKY	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE