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FFSH4065ADN-F155 +BOM

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 650 V, D1, TO-247-3L

Manufacturer:

onsemi
Mfr.Part #:

FFSH4065ADN-F155
Datasheet:

FFSH4065ADN-F155 Datasheet (PDF)
Product:

Schottky Silicon Carbide Diodes
Mounting Style:

Through Hole
Configuration:

Dual Anode Common Cathode
Technology:

SiC
EDA/CAD Models:

Request Free CAD Models for FFSH4065ADN-F155

FFSH4065ADN-F155 General Description

The FFSH4065ADN-F155 is a high-performance Silicon Carbide Schottky diode designed for demanding power electronic applications. With a current rating of 40 A and a voltage rating of 650 V, this diode offers superior efficiency and reliability. The TO-247-3L package ensures easy installation and excellent thermal performance, making it suitable for a wide range of industrial and commercial applications. Whether used in rail systems, tube amplifiers, or other high-power systems, the EliteSiC technology ensures optimal performance and long-term stability

Key Features

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Application

Telecommunication
Cloud system
Industrial

Specifications

Product Category	Schottky Diodes & Rectifiers	Product	Schottky Silicon Carbide Diodes
Mounting Style	Through Hole	Configuration	Dual Anode Common Cathode
Technology	SiC	If - Forward Current	40 A
Vrrm - Repetitive Reverse Voltage	650 V	Vf - Forward Voltage	1.5 V
Ifsm - Forward Surge Current	105 A	Ir - Reverse Current	200 uA
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	150 W	Product Type	Schottky Diodes & Rectifiers
Factory Pack Quantity	30	Subcategory	Diodes & Rectifiers
Vr - Reverse Voltage	650 V