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FFSP0465A +BOM

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, TO-220-2L

Manufacturer:

onsemi
Mfr.Part #:

FFSP0465A
Datasheet:

FFSP0465A Datasheet (PDF)
Product:

Schottky Silicon Carbide Diodes
Mounting Style:

Through Hole
Configuration:

Single
Technology:

SiC
EDA/CAD Models:

Request Free CAD Models for FFSP0465A

FFSP0465A General Description

Silicon Carbide (SiC) Schottky Diodes are at the forefront of power semiconductor innovation, providing superior switching performance and reliability compared to traditional silicon diodes. With unique features such as no reverse recovery current, temperature-independent switching characteristics, and exceptional thermal performance, SiC diodes offer a host of benefits for systems looking to maximize efficiency and performance. By incorporating SiC diodes, systems can achieve higher efficiency, increased operating frequencies, greater power density, reduced EMI, and cost savings through smaller system sizes. It's evident that Silicon Carbide diodes are shaping the future of power semiconductor technology

Key Features

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery

Application

PFC
Industrial Power
Solar
EV Charger
UPS
Welding

Specifications

Product Category	Schottky Diodes & Rectifiers	Product	Schottky Silicon Carbide Diodes
Mounting Style	Through Hole	Configuration	Single
Technology	SiC	If - Forward Current	4 A
Vrrm - Repetitive Reverse Voltage	650 V	Vf - Forward Voltage	1.5 V
Ifsm - Forward Surge Current	38 A	Ir - Reverse Current	200 uA
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	75 W	Product Type	Schottky Diodes & Rectifiers
Factory Pack Quantity	800	Subcategory	Diodes & Rectifiers
Vr - Reverse Voltage	650 V	Unit Weight	0.434810 oz