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FMH23N50E +BOM

N-Channel MOSFET with TO package and Super FAP-E technolog

Key Features

1. Maintains both low power loss and low noise

2. Lower RDS(on) characteristic

3. More controllable switching dv/dt by gate resistance

4. Smaller VGSringing waveform during switching

5. Narrow band of the gate threshold voltage (3.00.5V)

6. High avalanche durability

Specifications

Mount Through Hole Number of Pins 3
Drain to Source Breakdown Voltage 500 V Drain to Source Resistance 245 mΩ
Element Configuration Single Gate to Source Voltage (Vgs) 30 V
Max Operating Temperature 150 °C Min Operating Temperature -55 °C
Power Dissipation 315 W Turn-Off Delay Time 150 ns
Turn-On Delay Time 24 ns Height 19.5072 mm
Length 15.494 mm Width 4.4958 mm

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 6,089

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.792 $1.79
10+ $1.539 $15.39
30+ $1.381 $41.43
90+ $1.217 $109.53
510+ $1.144 $583.44
990+ $1.112 $1,100.88

The prices below are for reference only.

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