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See Technical Specifications

FQB30N06L +BOM

MOSFET QF 60V 35MOHM L D2PAK

Manufacturer:

FAIRCHILD
Mfr.Part #:

FQB30N06L
Datasheet:

FQB30N06L Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for FQB30N06L

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FQB30N06L General Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

32A, 60V, R_DS(on) = 35mΩ(Max.) @V_GS = 10 V, I_D = 16A
Low gate charge ( Typ. 15nC)
Low C_rss ( Typ. 50pF)
100% avalanche tested
175°C maximum junction temperature rating

Application

Other Industrial

Specifications

Source Content uid	FQB30N06L	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Avalanche Energy Rating (Eas)	350 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	32 A
Drain-source On Resistance-Max	0.045 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	79 W
Pulsed Drain Current-Max (IDM)	128 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON