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See Technical Specifications

FQB5N90 +BOM

MOSFET QF 900V 2.3OHM D2PAK

Manufacturer:

FAIRCHILD
Mfr.Part #:

FQB5N90
Datasheet:

FQB5N90 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
EDA/CAD Models:

Request Free CAD Models for FQB5N90

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FQB5N90 General Description

The FQB5N90 is a high-performance power MOSFET designed using innovative technology to enhance its efficiency and reliability. With a focus on reducing on-state resistance, this N-Channel MOSFET delivers superior switching performance and robust avalanche energy strength. Whether it is for switched mode power supplies, active power factor correction (PFC), or electronic lamp ballasts, this device is engineered to meet the demanding requirements of modern electronics

Key Features

5.4A, 900V, R_DS(on) = 2.3Ω(Max.) @V_GS = 10 V, I_D = 2.7A
Low gate charge ( Typ. 31nC)
Low C_rss ( Typ. 13pF)
100% avalanche tested
RoHS compliant

Application

Lighting

Specifications

Source Content uid	FQB5N90	Part Life Cycle Code	Obsolete
Pin Count	3	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.29.00.95
Avalanche Energy Rating (Eas)	660 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	900 V
Drain Current-Max (ID)	5.4 A	Drain-source On Resistance-Max	2.3 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	158 W	Pulsed Drain Current-Max (IDM)	21.6 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN LEAD	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON