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See Technical Specifications

FQD11P06 +BOM

Silicon-based P-Channel Power FET (Field-Effect Transistor) rated at 9

Manufacturer:

Onsemi
Mfr.Part #:

FQD11P06
Datasheet:

FQD11P06 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQD11P06 General Description

The FQD11P06 P-Channel enhancement mode power MOSFET boasts an impressive array of features that make it a standout choice for a variety of applications. Utilizing a unique planar stripe and DMOS technology, this MOSFET is designed to offer low on-state resistance, exceptional switching performance, and high avalanche energy strength. Whether you're working on switched mode power supplies, audio amplifiers, DC motor control, or variable switching power applications, this device is sure to deliver reliable and efficient performance

Key Features

High-speed switching
Fast rise and fall times
Low power consumption

Application

Game console
VR headset
Bluetooth earbuds

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	9.4 A	Rds On - Drain-Source Resistance	185 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Series	QFET
Configuration	Single	Fall Time	45 ns
Height	2.39 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	40 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	6.5 ns	Width	6.22 mm
Unit Weight	0.011640 oz