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See Technical Specifications

FQD13N06L +BOM

oxide semiconductor fet to-252 dpak-3

Manufacturer:

FAIRCHILD
Mfr.Part #:

FQD13N06L
Datasheet:

FQD13N06L Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD13N06L

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FQD13N06L General Description

Ideal for a wide range of applications, the FQD13N06L stands out as a reliable and efficient solution for power management needs. Its state-of-the-art design and advanced technology make it a top choice for professionals looking to optimize their systems. Whether used in audio amplifiers or switched mode power supplies, this MOSFET offers the performance and durability required for high-quality, long-lasting operation

Key Features

Fast switching time (Typ. 200ns)
High voltage handling (Typ. 500V)
Excellent reliability (MTBF Typ. 100000h)
Low noise operation (Typ. 5mVpp)

Application

Artistic craft supplies
Unique home decor items
Durable outdoor furniture

Specifications

Source Content uid	FQD13N06L	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.29.00.95	Additional Feature	FAST SWITCHING, AVALANCHE RATED
Avalanche Energy Rating (Eas)	90 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	11 A	Drain-source On Resistance-Max	0.145 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	28 W	Pulsed Drain Current-Max (IDM)	44 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN LEAD	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON