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See Technical Specifications

FQD19N10 +BOM

MOSFET QF 100V 100MOHM DPAK

Manufacturer:

FAIRCHILD
Mfr.Part #:

FQD19N10
Datasheet:

FQD19N10 Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD19N10

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FQD19N10 General Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

15.6A, 100V, R_DS(on) = 63mΩ(Max.) @V_GS = 10 V, I_D = 7.8A
Low gate charge ( Typ. 19nC)
Low C_rss ( Typ. 32pF)
100% avalanche tested

Application

LCD TV
PDP TV
LED TV

Specifications

Source Content uid	FQD19N10	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.29.00.95	Avalanche Energy Rating (Eas)	220 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	15.6 A
Drain-source On Resistance-Max	0.1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	50 W
Pulsed Drain Current-Max (IDM)	62.4 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	15.6 A	Rds On - Drain-Source Resistance	100 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Series	QFET
Fall Time	65 ns	Height	2.39 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	150 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20 ns	Typical Turn-On Delay Time	7.5 ns
Width	6.22 mm	Unit Weight	0.011640 oz