This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FQD19N10L +BOM

Power MOSFET FQD19N10L, with a current rating of 15

Manufacturer:

FAIRCHILD
Mfr.Part #:

FQD19N10L
Datasheet:

FQD19N10L Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD19N10L

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQD19N10L General Description

Engineered using cutting-edge technology, the FQD19N10L MOSFET offers unparalleled performance in power management applications. Its advanced design features ensure minimal power loss and maximum efficiency, making it an ideal choice for demanding applications such as audio amplifiers and DC motor control. With high avalanche energy strength and superior switching capabilities, the FQD19N10L MOSFET sets a new standard for power MOSFET technology

Key Features

Fully avalanche-tested for reliability
100% tested for high-quality assurance
Suitable for industrial power systems

Application

Camera
Drone
Action Cam

Specifications

Source Content uid	FQD19N10L	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.29.00.95	Additional Feature	AVALANCHE RATED, FAST SWITCHING
Avalanche Energy Rating (Eas)	220 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	15.6 A	Drain-source On Resistance-Max	0.11 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	50 W	Pulsed Drain Current-Max (IDM)	62.4 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN LEAD	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	15.6 A
Rds On - Drain-Source Resistance	100 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W	Channel Mode	Enhancement
Series	QFET	Fall Time	140 ns
Height	2.39 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	410 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	14 ns	Width	6.22 mm
Unit Weight	0.011640 oz