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MOSFET QFC 600V 11.5OHM DPAK
TO-252-3Manufacturer:
FAIRCHILD
Mfr.Part #:
FQD1N60C
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Additional Feature:
AVALANCHE RATED, FAST SWITCHING
EDA/CAD Models:
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This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Source Content uid | FQD1N60C | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, FAST SWITCHING | Avalanche Energy Rating (Eas) | 33 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 1 A |
Drain-source On Resistance-Max | 11.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 4 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 1 A | Rds On - Drain-Source Resistance | 11.5 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Series | QFET |
Fall Time | 27 ns | Height | 2.39 mm |
Length | 6.73 mm | Product Type | MOSFET |
Rise Time | 21 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 13 ns | Typical Turn-On Delay Time | 7 ns |
Width | 6.22 mm | Unit Weight | 0.011640 oz |
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