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MOSFET QFC 600V 4.7OHM DPAK
TO-252-3Manufacturer:
FAIRCHILD
Mfr.Part #:
FQD2N60C
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Transferred
Pin Count:
3
Reach Compliance Code:
compliant
EDA/CAD Models:
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This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Source Content uid | FQD2N60C | Pbfree Code | Yes |
Part Life Cycle Code | Transferred | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Avalanche Energy Rating (Eas) | 120 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 1.9 A |
Drain-source On Resistance-Max | 4.7 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 7.6 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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