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See Technical Specifications

FQU13N10L +BOM

MOSFET QF 100V 180MOHM L IPAK

Manufacturer:

FAIRCHILD
Mfr.Part #:

FQU13N10L
Datasheet:

FQU13N10L Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
EDA/CAD Models:

Request Free CAD Models for FQU13N10L

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FQU13N10L General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

10A, 100V, R_DS(on) = 180mΩ(Max.) @V_GS = 10 V, I_D = 5A
Low Gate Charge ( Typ. 9.5nC)
Low C_rss ( Typ. 35pF)
100% Avalanche Tested
Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers

Application

LED TV

Specifications

Source Content uid	FQU13N10L	Part Life Cycle Code	Obsolete
Pin Count	3	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.29.00.95
Additional Feature	AVALANCHE RATED, FAST SWITCHING	Avalanche Energy Rating (Eas)	95 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	10 A	Drain-source On Resistance-Max	0.2 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-251
JESD-30 Code	R-PSIP-T3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	40 W
Pulsed Drain Current-Max (IDM)	40 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON