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IAUA200N04S5N010AUMA1 +BOM

MOSFET MOSFET_(20V 40V)

IAUA200N04S5N010AUMA1 General Description

N-Channel 40 V 200A (Tc) 167W (Tc) Surface Mount PG-HSOF-5-1

Infineon Technologies Corporation Inventory

Key Features

  • OptiMOS
  • TM
  • N-channel - Enhancement mode - Normal Level
  • AEC Q101 qualified
  • MSL3 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series Automotive, AEC-Q101, OptiMOS™-5
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7650 pF @ 25 V
FET Feature - Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IAUA200 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 200 A
Rds On - Drain-Source Resistance 900 uOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.8 V Qg - Gate Charge 99 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 167 W Channel Mode Enhancement
Configuration Single Fall Time 12 ns
Moisture Sensitive Yes Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 23 ns Typical Turn-On Delay Time 11 ns
Part # Aliases IAUA200N04S5N010 SP001497688 Unit Weight 0.012997 oz

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IAUA200N04S5N010AUMA1 Datasheet PDF

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