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IAUC100N04S6N022ATMA1 +BOM

N-Channel 40 V 100A (Tc) 75W (Tc) Surface Mount PG-TDSON-8

IAUC100N04S6N022ATMA1 General Description

N-Channel 40 V 100A (Tc) 75W (Tc) Surface Mount PG-TDSON-8

Infineon Technologies Corporation Inventory

Key Features

  • OptiMOS
  • TM
  • N-channel - Enhancement mode - Normal LevelAEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series Automotive, AEC-Q101, OptiMOS™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 2.26mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 32µA Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2421 pF @ 25 V
FET Feature - Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IAUC100 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.11 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.6 V Qg - Gate Charge 29 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 75 W Channel Mode Enhancement
Fall Time 6 ns Product Type MOSFET
Rise Time 3 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 11 ns Typical Turn-On Delay Time 5 ns
Part # Aliases IAUC100N04S6N022 SP001790496 Unit Weight 0.003966 oz

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