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IAUT150N10S5N035ATMA1 +BOM
N-Channel Automotive MOSFET with 100V Voltage Rating and 150A Current Capacity
HSOF-8-
Manufacturer:
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Mfr.Part #:
IAUT150N10S5N035ATMA1
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Datasheet:
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Series:
OptiMOS™-5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Models:
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IAUT150N10S5N035ATMA1 General Description
The IAUT150N10S5N035ATMA1's high performance and exceptional reliability make it an ideal choice for automotive power electronics designers looking for a rugged, efficient, and environmentally friendly solution. With its impressive feature set and automotive qualification, this MOSFET is well-suited for a wide range of power management and motor control applications in the automotive industry
Key Features
- N-channel - Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS compliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™-5 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 3.5mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 110µA | Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 6110 pF @ 50 V |
FET Feature | - | Power Dissipation (Max) | 166W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IAUT150 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 150 A |
Rds On - Drain-Source Resistance | 3.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.2 V | Qg - Gate Charge | 67 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 166 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Configuration | Single |
Fall Time | 26 ns | Product Type | MOSFET |
Rise Time | 7 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 23 ns | Typical Turn-On Delay Time | 12 ns |
Part # Aliases | IAUT150N10S5N035 SP001416126 | Unit Weight | 0.027197 oz |
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IAUT150N10S5N035ATMA1 Datasheet PDF
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In Stock: 7,670
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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