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IAUT260N10S5N019 +BOM
Semiconductor device categorized under the product code IAUT260N10S5N019
8-PowerSFN-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IAUT260N10S5N019
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Datasheet:
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Series:
OptiMOS™-5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Models:
Availability: 5503 PCS
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IAUT260N10S5N019 General Description
N-Channel 100 V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1
Specifications
Series | OptiMOS™-5 | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 260A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 3.8V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 11830 pF @ 50 V | Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IAUT260 |
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In Stock: 5,503
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $8.315 | $8.32 |
200+ | $3.219 | $643.80 |
500+ | $3.106 | $1,553.00 |
1000+ | $3.050 | $3,050.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IAUT260N10S5N019, guaranteed quotes back within 12hr.
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