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See Technical Specifications

IAUT300N08S5N014 +BOM

ROHS-approved MOSFETs

Manufacturer:

Infineon Technologies
Mfr.Part #:

IAUT300N08S5N014
Datasheet:

IAUT300N08S5N014 Datasheet (PDF)
Series:

OptiMOS™-5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

80 V
EDA/CAD Models:

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IAUT300N08S5N014 General Description

The IAUT300N08S5N014 power MOSFET from Infineon Technologies is a top-of-the-line solution for high power applications. With a drain-source voltage rating of 80V and a continuous drain current rating of 300A, this MOSFET is capable of handling a wide range of power supply and motor control applications with ease. Its low on-state resistance of 5mOhm ensures minimal conduction losses, resulting in high efficiency in switching operations. Additionally, its high di/dt capability makes it suitable for high-frequency switching applications, making it a versatile choice for various industrial and automotive applications

Specifications

Series	OptiMOS™-5	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	300A (DC)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 100A, 10V	Vgs(th) (Max) @ Id	3.8V @ 230µA
Gate Charge (Qg) (Max) @ Vgs	187 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13178 pF @ 40 V	Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUT300