This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IHW30N160R5 +BOM

IGBT Transistors HOME APPLIANCES 14

Manufacturer:

INFINEON
Mfr.Part #:

IHW30N160R5
Datasheet:

IHW30N160R5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Collector Current-Max (IC):

60 A
EDA/CAD Models:

Request Free CAD Models for IHW30N160R5

IHW30N160R5 General Description

The Reverse Conducting R5 1600 V, 30 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 1600 V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Collector Current-Max (IC)	60 A
Collector-Emitter Voltage-Max	1600 V	Configuration	SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	5.8 V	Gate-Emitter Voltage-Max	20 V
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	175 °C
Operating Temperature-Min	-40 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	263 W	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	411 ns
VCEsat-Max	2.15 V