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See Technical Specifications

IPW60R099C7 +BOM

MOSFET High Power New

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPW60R099C7
Datasheet:

IPW60R099C7 Datasheet (PDF)
IDpuls Max:

83.0 A
Mounting:

THT
Ptot Max:

110.0 W
Polarity:

N
EDA/CAD Models:

Request Free CAD Models for IPW60R099C7

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IPW60R099C7 General Description

The IPW60R099C7 is the epitome of innovation in the realm of power electronics, offering unparalleled performance with its 600V CoolMOS™ C7 superjunction MOSFET technology. Setting a new benchmark with a remarkable 50% reduction in turn-off losses compared to the CoolMOS™ CP, this MOSFET is designed to excel in applications such as power factor correction (PFC), TTF, and high-power-density charger designs. Efficiency and total cost of ownership considerations are paramount in today's fast-paced technological landscape, making the IPW60R099C7 an ideal choice for energy-sensitive applications like hyperdata centers and high-efficiency telecom rectifiers. By harnessing the advanced capabilities of the CoolMOS™ C7 series, users can achieve significant efficiency gains of up to 0.7% in PFC and 0.1% in LLC topologies. In practical terms, implementing 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4-pin package in a 2.5kW server PSU can lead to substantial energy cost reductions of around 10%, underscoring the immense benefits of this groundbreaking technology

Specifications

IDpuls max	83.0 A	Mounting	THT
Ptot max	110.0 W	Polarity	N
RthJA max	62.0 K/W	RthJC max	1.135 K/W
VDS max	600.0 V	ID max	22.0 A
RDS (on) max	99.0 mΩ	Special Features	highest performance
VGS(th) max	4.0 V	VGS(th) min	3.0 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C