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See Technical Specifications

IPW65R045C7 +BOM

MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPW65R045C7
Datasheet:

IPW65R045C7 Datasheet (PDF)
IDpuls Max:

212.0 A
RthJC Max:

0.55 K/W
RthJA Max:

62.0 K/W
Ptot Max:

227.0 W
EDA/CAD Models:

Request Free CAD Models for IPW65R045C7

Email: [email protected]

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IPW65R045C7 General Description

The IPW65R045C7 Power Field-Effect Transistor is a high-performance component that offers exceptional reliability and efficiency. Its N-Channel design and low on-resistance of 0.045ohm make it ideal for a wide range of applications, from power supplies to motor drives. With a maximum current rating of 46A and a voltage rating of 650V, this MOSFET can handle even the most demanding tasks with ease. The TO-247 package ensures easy installation and reliable operation, while the green plastic housing adds a touch of visual appeal to the overall design

Key Features

Increased MOSFET dv/dt ruggedness
Better efficiency due to best inclass FOM RDS(on)Eoss and RDS(on)Qg
Best in class RDS(on)/package
Easy to use/drive
Pb-free plating, halogen free mold compound
Qualified for industrial grade applications according to JEDEC(J-STD20
and JESD22)

Specifications

IDpuls max	212.0 A	RthJC max	0.55 K/W
RthJA max	62.0 K/W	Ptot max	227.0 W
VDS max	650.0 V	Polarity	N
ID max	46.0 A	RDS (on) max	45.0 mΩ
Mounting	THT	Special Features	highest performance
VGS(th) max	4.0 V	VGS(th) min	3.0 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C