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See Technical Specifications

IRF3415PBF +BOM

N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-220AB

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRF3415PBF
Datasheet:

IRF3415PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

150 V
EDA/CAD Models:

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IRF3415PBF General Description

The IRF3415PBF power MOSFET transistor from Infineon Technologies is a high-performance device designed for a variety of power applications. With a maximum voltage rating of 150 volts and a continuous drain current of 18 amperes, this N-channel transistor is well-suited for demanding power electronics requirements. Its low on-resistance of 0.046 ohms contributes to reduced power losses and increased efficiency, while its gate threshold voltage of 2 to 4 volts and gate-source voltage of ±20 volts ensure compatibility with a wide range of driver circuits. Housed in a TO-220 package with three pins, the IRF3415PBF is easy to mount and install, making it convenient for industrial and automotive applications. Operating temperatures ranging from -55 to 175 degrees Celsius further extend its versatility, allowing it to perform reliably in harsh environments

Key Features

Robust avalanche behavior shown
Low on-resistance achieved
Fast switching speed ensured
Solid-state reliability guaranteed

Application

For power supplies
In motor control
Used in DC-DC converters

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	43A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	42mOhm @ 22A, 10V	Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V	Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRF3415