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IRF3415PBF +BOM

N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-220AB

IRF3415PBF Information

General Description

The IRF3415PBF power MOSFET transistor from Infineon Technologies is a high-performance device designed for a variety of power applications. With a maximum voltage rating of 150 volts and a continuous drain current of 18 amperes, this N-channel transistor is well-suited for demanding power electronics requirements. Its low on-resistance of 0.046 ohms contributes to reduced power losses and increased efficiency, while its gate threshold voltage of 2 to 4 volts and gate-source voltage of ±20 volts ensure compatibility with a wide range of driver circuits. Housed in a TO-220 package with three pins, the IRF3415PBF is easy to mount and install, making it convenient for industrial and automotive applications. Operating temperatures ranging from -55 to 175 degrees Celsius further extend its versatility, allowing it to perform reliably in harsh environments

IRF3415PBF

Key Features

  • Robust avalanche behavior shown
  • Low on-resistance achieved
  • Fast switching speed ensured
  • Solid-state reliability guaranteed

Application

  • For power supplies
  • In motor control
  • Used in DC-DC converters

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 42mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IRF3415
Package/Case TO-220-3

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In Stock: 6,507

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.264 $1.26
10+ $1.076 $10.76
50+ $0.902 $45.10
100+ $0.784 $78.40
500+ $0.733 $366.50
1100+ $0.710 $781.00

The prices above are for reference only.

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