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MOSFET MOSFT DUAL NCh 20V 2.7A
SOT-23-6Thin,TSOT-23-6Manufacturer:
Infineon Technologies
Mfr.Part #:
IRF5852TRPBF
Datasheet:
Series:
HEXFET®
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
EDA/CAD Models:
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Mosfet Array 20V 2.7A 960mW Surface Mount 6-TSOP
Series | HEXFET® | Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V | Current - Continuous Drain (Id) @ 25°C | 2.7A |
Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V | Vgs(th) (Max) @ Id | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
Power - Max | 960mW | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IRF58 |
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