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IRF5852TRPBF +BOM

MOSFET MOSFT DUAL NCh 20V 2.7A

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRF5852TRPBF
Datasheet:

IRF5852TRPBF Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

20V
EDA/CAD Models:

Request Free CAD Models for IRF5852TRPBF

IRF5852TRPBF Information

General Description

The IRF5852TRPBF from Infineon Technologies is a MOSFET (Metal Oxide) based on HEXFET technology. This 2 N-Channel (Dual) device is designed for logic level gate applications, featuring high current and low threshold voltage. With a Drain to Source Voltage of 20V and Continuous Drain Current of 2.7A at 25°C, it is suitable for various switching and linear applications. The device operates within an operating temperature range of -55°C ~ 150°C (TJ) and can be mounted using the SOT-23-6 Thin package. Despite being obsolete, this product still offers reliable performance in modern systems.

Key Features

Logic level gate for simple interface with microprocessors
High current capability: 2.7A at 25°C
Low threshold voltage: 1.25V @ 250μA
Compact surface mount package: SOT-23-6 Thin, TSOT-23-6
Operating temperature range: -55°C ~ 150°C (TJ)

Application

Power supplies and DC/DC converters
Motor control applications
Audio and video equipment
Automotive systems
Industrial controls

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A	Rds On (Max) @ Id, Vgs	90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V	Power - Max	960mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRF58	Package/Case	SOT-23-6Thin,TSOT-23-6